BSP296E6327

Производитель:

Infineon Technologies

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Описание:

MOSFET N-CH 100V 1.1A SOT223

Категория:

Discrete Semiconductor Products

Корпус:

223

Год:

2004

Technical/Catalog Information	BSP296E6327
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	1.1A
Rds On (Max) @ Id, Vgs	700 mOhm @ 1.1A, 10V
Input Capacitance (Ciss) @ Vds	364pF @ 25V
Power - Max	1.79W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17.2nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSP296E6327 BSP296E6327 BSP296INTR ND BSP296INTRND BSP296INTR

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