RDN080N25FU6

Производитель:

Rohm Semiconductor

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Описание:

MOSFET N-CH 250V 8A T0-220FN

Категория:

Discrete Semiconductor Products

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Technical/Catalog Information	RDN080N25FU6
Vendor	Rohm Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	500 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	543pF @ 10V
Power - Max	35W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	TO-220FN-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RDN080N25FU6 RDN080N25FU6

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