HGT1S2N120CN

HGT1S2N120CN



Производитель:

Fairchild Semiconductor
Описание:
 IGBT NPT N-CH 1200V 13A I2PAK
Категория:
 Discrete Semiconductor Products
Корпус:
 06+
Год:
 800/REEL

Datasheet (Техническое описание) HGT1S2N120CN

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationHGT1S2N120CN
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)13A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 2.6A
Power - Max104W
Mounting TypeThrough Hole
Package / CaseTO-262
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGT1S2N120CN
HGT1S2N120CN


 
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