BU808DFI

BU808DFI



Производитель:

STMicroelectronics
Описание:
 IC TRANSISTR DARL NPN ISOWATT218
Категория:
 Discrete Semiconductor Products
Корпус:
 TO-3P
Год:
 05+

Datasheet (Техническое описание) BU808DFI

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationBU808DFI
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)700V
Current - Collector (Ic) (Max)8A
Power - Max52W
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic1.6V @ 500mA, 5A
Frequency - Transition-
Current - Collector Cutoff (Max)400??A
Mounting TypeThrough Hole
Package / CaseISOWATT-218-3
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BU808DFI
BU808DFI


 
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