| Technical/Catalog Information | PBRN123EK,115 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN - Pre-Biased |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Current - Collector (Ic) (Max) | 600mA |
| Power - Max | 570mW |
| Resistor - Base (R1) (Ohms) | 2.2K |
| Resistor - Emitter Base (R2) (Ohms) | 2.2K |
| Vce Saturation (Max) @ Ib, Ic | 160mV @ 10mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 300mA, 5V |
| Frequency - Transition | - |
| Mounting Type | Surface Mount |
| Package / Case | SC-59-3, SMT3, SOT-346, TO-236 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | 568; SOT346; ; 3 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | PBRN123EK,115
PBRN123EK,115
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