DTC115TMT2L

DTC115TMT2L



Производитель:

Rohm Semiconductor
Описание:
 SMALL SIGNAL SURFACE-MT SILICON
Категория:
 Discrete Semiconductor Products
Корпус:
 2008
Год:
 64,000

Datasheet (Техническое описание) DTC115TMT2L

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationDTC115TMT2L
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max150mW
Resistor - Base (R1) (Ohms)100K
Resistor - Emitter Base (R2) (Ohms)-
Vce Saturation (Max) @ Ib, Ic300mV @ 100??A, 1mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Frequency - Transition250MHz
Mounting TypeSurface Mount
Package / CaseVMT3
PackagingTape & Reel (TR)
Drawing Number*
Other Names DTC115TMT2L
DTC115TMT2L


 
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