| Technical/Catalog Information | EMB10T2R |
| Vendor | Rohm Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 150mW |
| Resistor - Base (R1) (Ohms) | 2.2K |
| Resistor - Emitter Base (R2) (Ohms) | 104 |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250??A, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Mounting Type | Surface Mount |
| Package / Case | EMT6 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | EMB10T2R
EMB10T2R
EMB10T2RTR ND
EMB10T2RTRND
EMB10T2RTR
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