TPS1120DR

TPS1120DR



Производитель:

Texas Instruments
Описание:
 MOSFET 2P-CH 15V 1.17A 8-SOIC
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 04+

Datasheet (Техническое описание) TPS1120DR

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Technical/Catalog InformationTPS1120DR
VendorTexas Instruments
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)15V
Current - Continuous Drain (Id) @ 25° C1.17A
Rds On (Max) @ Id, Vgs180 mOhm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds -
Power - Max840mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs5.45nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number296; 4040047-2; D; 8
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPS1120DR
TPS1120DR
296 1352 2 ND
29613522ND
296-1352-2


 
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