PMWD19UN,518

PMWD19UN,518



Производитель:


NXP Semiconductors (VA)
Описание:
MOSFET N-CH TRENCH DL 30V 8TSSOP
Категория:
Discrete Semiconductor Products
Корпус:
--
Год:
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Datasheet (Техническое описание) PMWD19UN,518

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Technical/Catalog InformationPMWD19UN,518
VendorNXP Semiconductors (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5.6A
Rds On (Max) @ Id, Vgs23 mOhm @ 3.5A, 4.5V
Input Capacitance (Ciss) @ Vds 1478pF @ 10V
Power - Max2.3W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs28nC @ 5V
Package / Case8-TSSOP
FET FeatureLogic Level Gate
Drawing Number568; SOT530; ;
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PMWD19UN,518
PMWD19UN,518
568 2361 6 ND
56823616ND
568-2361-6


 
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