TPS1100DR

TPS1100DR



Производитель:

Texas Instruments
Описание:
 MOSFET P-CH 15V 1.6A 8-SOIC
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 05+

Datasheet (Техническое описание) TPS1100DR

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Technical/Catalog InformationTPS1100DR
VendorTexas Instruments
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)15V
Current - Continuous Drain (Id) @ 25° C1.6A
Rds On (Max) @ Id, Vgs180 mOhm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds -
Power - Max791mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs5.45nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number296; 4040047-2; D; 8
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPS1100DR
TPS1100DR


 
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