SPI11N65C3

SPI11N65C3



Производитель:

Infineon Technologies
Описание:
 MOSFET N-CH 650V 11A TO-262
Категория:
 Discrete Semiconductor Products
Корпус:
 7850
Год:
 INFINEON

Datasheet (Техническое описание) SPI11N65C3

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationSPI11N65C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs380 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 25V
Power - Max125W
PackagingTube
Gate Charge (Qg) @ Vgs60nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPI11N65C3
SPI11N65C3
SPI11N65C3IN ND
SPI11N65C3INND
SPI11N65C3IN


 
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