STB30NM60N

STB30NM60N



Производитель:

STMicroelectronics (VA)
Описание:
 MOSFET N-CH 600V 25A D2PAK
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) STB30NM60N

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Technical/Catalog InformationSTB30NM60N
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C25A
Rds On (Max) @ Id, Vgs130 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds 2700pF @ 50V
Power - Max190W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs91nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB30NM60N
STB30NM60N
497 8474 6 ND
49784746ND
497-8474-6


 
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