STB11NM60N-1

STB11NM60N-1



Производитель:

STMicroelectronics
Описание:
 MOSFET N-CH 600V 10A I2PAK
Категория:
 Discrete Semiconductor Products
Корпус:
 07+
Год:
 4000

Datasheet (Техническое описание) STB11NM60N-1

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationSTB11NM60N-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs450 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds 850pF @ 50V
Power - Max90W
PackagingTube
Gate Charge (Qg) @ Vgs31nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB11NM60N 1
STB11NM60N1


 
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