STB19NM65N

STB19NM65N



Производитель:

STMicroelectronics
Описание:
 MOSFET N-CH 650V 15.5A D2PAK
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) STB19NM65N

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Technical/Catalog InformationSTB19NM65N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C15.5A
Rds On (Max) @ Id, Vgs270 mOhm @ 7.75A, 10V
Input Capacitance (Ciss) @ Vds 1900pF @ 50V
Power - Max150W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs55nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB19NM65N
STB19NM65N
497 7001 2 ND
49770012ND
497-7001-2


 
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