STB20NM60-1

STB20NM60-1



Производитель:

STMicroelectronics
Описание:
 MOSFET N-CH 600V 20A I2PAK
Категория:
 Discrete Semiconductor Products
Корпус:
 7850
Год:
 ST

Datasheet (Техническое описание) STB20NM60-1

Поиск в бесплатном архиве даташитов datasheet.su


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Technical/Catalog InformationSTB20NM60-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs290 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 1500pF @ 25V
Power - Max192W
PackagingTube
Gate Charge (Qg) @ Vgs54nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB20NM60 1
STB20NM601
497 5383 5 ND
49753835ND
497-5383-5


 
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