STB21NM60N-1

STB21NM60N-1



Производитель:

STMicroelectronics
Описание:
 MOSFET N-CH 600V 17A I2PAK
Категория:
 Discrete Semiconductor Products
Корпус:
 7850
Год:
 ST

Datasheet (Техническое описание) STB21NM60N-1

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationSTB21NM60N-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs220 mOhm @ 8.5A, 10V
Input Capacitance (Ciss) @ Vds 1900pF @ 50V
Power - Max140W
PackagingTube
Gate Charge (Qg) @ Vgs66nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB21NM60N 1
STB21NM60N1
497 5728 ND
4975728ND
497-5728


 
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