STB23NM60ND

STB23NM60ND



Производитель:

STMicroelectronics (VA)
Описание:
 MOSFET N-CH 600V 19.5A D2PAK
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) STB23NM60ND

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Technical/Catalog InformationSTB23NM60ND
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C19.5A
Rds On (Max) @ Id, Vgs180 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 2050pF @ 50V
Power - Max150W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs70nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB23NM60ND
STB23NM60ND
497 8472 6 ND
49784726ND
497-8472-6


 
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