MJ11016G

MJ11016G



Производитель:

ON Semiconductor
Описание:
 TRANS DARL NPN 30A 120V TO3
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 07+PBFREE

Datasheet (Техническое описание) MJ11016G

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationMJ11016G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)120V
Current - Collector (Ic) (Max)30A
Power - Max200W
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 20A, 5V
Vce Saturation (Max) @ Ib, Ic3V @ 200mA, 20A
Frequency - Transition4MHz
Current - Collector Cutoff (Max)1mA
Mounting TypeChassis Mount
Package / CaseTO-204, TO-3
PackagingTray
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJ11016G
MJ11016G
MJ11016GOS ND
MJ11016GOSND
MJ11016GOS


 
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