MJD253-1G

MJD253-1G



Производитель:


ON Semiconductor
Описание:
TRANS POWER PNP 4A 100V DPAK
Категория:
Discrete Semiconductor Products
Корпус:
7850
Год:
ON

Datasheet (Техническое описание) MJD253-1G

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationMJD253-1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)100V
Current - Collector (Ic) (Max)4A
Power - Max12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 1V
Vce Saturation (Max) @ Ib, Ic300mV @ 50mA, 500mA
Frequency - Transition40MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJD253 1G
MJD2531G


 
Похожие микросхемы:


MJD6039T4G
TRANS DARL NPN 4A 80V DPAK
MJD6039T4
TRANS DARL NPN 4A 80V DPAK
MJD5731T4G
TRANS POWER PNP 1A 350V DPAK
MJD5731T4
TRANS POWER PNP 1A 350V DPAK
MJD50TF
TRANSISTOR NPN 400V 1A DPAK
MJD50T4
TRANSISTOR NPN 400V 1A DPAK
MJD50G
TRANS POWER NPN 1A 400V DPAK
MJD50
TRANS POWER NPN 1A 400V DPAK
MJD47TF
TRANSISTOR NPN 250V 1A DPAK
MJD47T4G
TRANS PWR NPN 1A 250V DPAK
MJD47T4
TRANSISTOR NPN 250V 1A DPAK
MJD47G
TRANS POWER NPN 1A 250V DPAK
MJD47
TRANS POWER NPN 1A 250V DPAK
MJD45H11TM
TRANSISTOR PNP 80V 8A DPAK
MJD45H11TF
TRANSISTOR PNP 80V 8A DPAK
MJD45H11T4G
TRANS PWR PNP 8A 80V DPAK
MJD45H11T4
TRANSISTOR PNP 8A 80V D-PAK
MJD45H11RLG
TRANS POWER PNP 8A 80V DPAK
MJD45H11RL
TRANS POWER PNP 8A 80V DPAK