MJD112-1G

Производитель:

ON Semiconductor

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Описание:

TRANS DARL NPN 2A 100V STR DPAK

Категория:

Discrete Semiconductor Products

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Technical/Catalog Information	MJD112-1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	2A
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V
Vce Saturation (Max) @ Ib, Ic	2V @ 8mA, 2A
Frequency - Transition	25MHz
Current - Collector Cutoff (Max)	20??A
Mounting Type	Through Hole
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD112 1G MJD1121G MJD112 1GOS ND MJD1121GOSND MJD112-1GOS

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