MMBT5551-7

MMBT5551-7



Производитель:

Diodes Inc (VA)
Описание:
 TRANS 160V 350MW NPN SMD SOT23-3
Категория:
 Discrete Semiconductor Products
Корпус:
 DIODES
Год:
 05+

Datasheet (Техническое описание) MMBT5551-7

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationMMBT5551-7
VendorDiodes Inc (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)160V
Current - Collector (Ic) (Max)200mA
Power - Max300mW
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 1mA, 10mA
Frequency - Transition300MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
PackagingCut Tape (CT)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MMBT5551 7
MMBT55517
MMBT5551 7DICT ND
MMBT55517DICTND
MMBT5551-7DICT


 
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