MMBT5551-7-F

MMBT5551-7-F



Производитель:

Diodes Inc
Описание:
 TRANS NPN 160V 350MW SMD SOT23-3
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 06+

Datasheet (Техническое описание) MMBT5551-7-F

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationMMBT5551-7-F
VendorDiodes Inc
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)160V
Current - Collector (Ic) (Max)200mA
Power - Max300mW
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 1mA, 10mA
Frequency - Transition300MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MMBT5551 7 F
MMBT55517F
MMBT5551 FDITR ND
MMBT5551FDITRND
MMBT5551-FDITR


 
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