FCP20N60

FCP20N60



Производитель:

Fairchild Semiconductor
Описание:
 MOSFET N-CHAN 600V TO-220
Категория:
 Transistors, FETs, IGBTs
Корпус:
 TO-220
Год:
 01+

Datasheet (Техническое описание) FCP20N60

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Technical/Catalog InformationFCP20N60
VendorFairchild Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeThrough Hole
Package NameTO-220
FET TypeN-Channel
Drain to Source Voltage (Vdss)600.0 V [Nom]
Voltage Gate to Source (Vgs)30.0 V [Max]
Continuous Drain Current (Id)20.00 A [Nom]
Rds On (Max) @ Id, Vgs190 mOhms @ 10A, 10V
Rds On (Typ) @ Id, Vgs150 mOhms @ 10A, 10V
Input Capacitance (Ciss)3080.0 pF @ 25.0 V
Power Dissipation208.000 W [Max]
PackagingTube
Protection Diode(s)Drain to Source
Delay Time On62.00 ns [Typ]
Delay Time Off230.00 ns [Typ]
Rise Time140.000 ns [Typ]
Fall Time65.000 ns [Typ]
Vgs Min.3.00 V @ 250.0 ??A
Vgs Max.5.00 V @ 250.0 ??A
Drain Peak Current (Idm)60.000 A [Nom]
Operating Junction Temperature-55 °C [Min]
Operating Junction Temperature150 °C [Max]
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FCP20N60
FCP20N60


 
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