NIS6111QPT1G




Производитель:

ON Semiconductor
Описание:
 DIODE ORING FET 24V 30A 32-LLP
Категория:
 Integrated Circuits (ICs)
Корпус:
 --
Год:
 DC05

Datasheet (Техническое описание) NIS6111QPT1G

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationNIS6111QPT1G
VendorON Semiconductor
CategoryIntegrated Circuits (ICs)
Package / Case32-LLP
PackagingTape & Reel (TR)
Number of Outputs1
Delay Time - OFF35ns
Delay Time - ON45ns
FET PolarityN-Channel
Current - Supply1.3mA
Voltage - Supply4.8 V ~ 5.2 V
Internal Switch(s)Yes
ApplicationsFlyback, Forward Converters
Operating Temperature-40°C ~ 125°C
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NIS6111QPT1G
NIS6111QPT1G
NIS6111QPT1GOS ND
NIS6111QPT1GOSND
NIS6111QPT1GOS


 
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