FDAF59N30

FDAF59N30



Производитель:

Fairchild Semiconductor
Описание:
 MOSFET N-CHAN 300V 34A TO-3PF
Категория:
 Discrete Semiconductor Products
Корпус:
 7850
Год:
 FAIRCHILD

Datasheet (Техническое описание) FDAF59N30

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationFDAF59N30
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C34A
Rds On (Max) @ Id, Vgs56 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds 4670pF @ 25V
Power - Max161W
PackagingTube
Gate Charge (Qg) @ Vgs100nC @ 10V
Package / CaseTO-3PF
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDAF59N30
FDAF59N30


 
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