EMD5DXV6T5G




Производитель:


ON Semiconductor
Описание:
TRANS BRT NPN/PNP DL 50V SOT-563
Категория:
Discrete Semiconductor Products
Корпус:
--
Год:
--

Datasheet (Техническое описание) EMD5DXV6T5G

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationEMD5DXV6T5G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max500mW
Resistor - Base (R1) (Ohms)4.7K, 47K
Resistor - Emitter Base (R2) (Ohms)2.2K, 47K
Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 5mA, 10V / 80 @ 5mA, 10V
Frequency - Transistion-
Mounting TypeSurface Mount
Package / CaseSOT-563
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names EMD5DXV6T5G
EMD5DXV6T5G


 
Похожие микросхемы:


EMD9T2R
TRANS PNP/NPN 50V 70MA EMT6
EMD6T2R
TRANS PNP/NPN 50V 100MA EMT6
EMD5T2R
TRANS COMPLEX DGTL PNP/NPN EMT6
EMD4T2R
TRANS COMPLEX DGTL PNP/NPN EMT6
EMD3T2R
TRANS PNP/NPN 50V 50MA EMT6
EMD2T2R
TRANS PNP/NPN 50V 30MA EMT6
EMD29T2R
TRANS COMPLEX DGTL PNP/NPN EMT6
EMD22T2R
TRANS PRE-BIASED 50V 100MA EMT6
EMD12T2R
TRANS PNP/NPN 50V 30MA EMT6