TPCS8009-H(TE12L,Q




Производитель:

Toshiba
Описание:
 MOSFET N-CH 150V 2.1A 2-3R1F
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) TPCS8009-H(TE12L,Q

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Technical/Catalog InformationTPCS8009-H(TE12L,Q
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C2.1A
Rds On (Max) @ Id, Vgs350 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds 600pF @ 10V
Power - Max600mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs10nC @ 10V
Package / Case2-3R1F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPCS8009 H TE12L,Q
TPCS8009HTE12L,Q


 
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