MUN5330DW1T1G




Производитель:

ON Semiconductor
Описание:
 TRANS BRT DUAL 100MA 50V SOT-363
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) MUN5330DW1T1G

Поиск в бесплатном архиве даташитов datasheet.su


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Technical/Catalog InformationMUN5330DW1T1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max385mW
Resistor - Base (R1) (Ohms)1K
Resistor - Emitter Base (R2) (Ohms)1K
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce3 @ 5mA, 10V
Frequency - Transistion-
Mounting TypeSurface Mount
Package / CaseSOT-363
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MUN5330DW1T1G
MUN5330DW1T1G


 
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