FDD2612

FDD2612



Производитель:

Fairchild Semiconductor
Описание:
 MOSFET N-CH 200V 4.9A D-PAK
Категория:
 Discrete Semiconductor Products
Корпус:
 TO-252
Год:
 06+

Datasheet (Техническое описание) FDD2612

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationFDD2612
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C4.9A
Rds On (Max) @ Id, Vgs720 mOhm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds 234pF @ 100V
Power - Max1.6W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs11nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD2612
FDD2612


 
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