FDN359AN

FDN359AN



Производитель:

Fairchild Semiconductor
Описание:
 MOSFET N-CHAN 30V 2.7A SSOT3
Категория:
 Discrete Semiconductor Products
Корпус:
 06+
Год:
 SOT-23

Datasheet (Техническое описание) FDN359AN

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationFDN359AN
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.7A
Rds On (Max) @ Id, Vgs46 mOhm @ 2.7A, 10V
Input Capacitance (Ciss) @ Vds 480pF @ 10V
Power - Max460mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs7nC @ 5V
Package / CaseSuper SOT-3
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDN359AN
FDN359AN
FDN359ANTR ND
FDN359ANTRND
FDN359ANTR


 
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