FDP047N10

FDP047N10



Производитель:

Fairchild Semiconductor
Описание:
 MOSFET N-CHAN 100V 120A TO-220
Категория:
 Discrete Semiconductor Products
Корпус:
 TO-220
Год:
 08+

Datasheet (Техническое описание) FDP047N10

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationFDP047N10
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C120A
Rds On (Max) @ Id, Vgs4.7 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 15265pF @ 25V
Power - Max375W
PackagingTube
Gate Charge (Qg) @ Vgs210nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP047N10
FDP047N10


 
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