FDP18N20F

FDP18N20F



Производитель:

Fairchild Semiconductor
Описание:
 MOSFET N-CH 200V 18A TO-220
Категория:
 Discrete Semiconductor Products
Корпус:
 TO-220
Год:
 08+

Datasheet (Техническое описание) FDP18N20F

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationFDP18N20F
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs145 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 1180pF @ 25V
Power - Max100W
PackagingTube
Gate Charge (Qg) @ Vgs26nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP18N20F
FDP18N20F


 
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