FDS2170N3

FDS2170N3



Производитель:

Fairchild Semiconductor (VA)
Описание:
 MOSFET N-CHAN 200V 3A 8SOIC
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 03+

Datasheet (Техническое описание) FDS2170N3

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationFDS2170N3
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs128 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 1292pF @ 100V
Power - Max1.8W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs36nC @ 10V
Package / Case8-SOIC
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS2170N3
FDS2170N3
FDS2170N3CT ND
FDS2170N3CTND
FDS2170N3CT


 
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