FQD19N10LTM

FQD19N10LTM



Производитель:

Fairchild Semiconductor
Описание:
 MOSFET N-CH 100V 15.6A DPAK
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
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Datasheet (Техническое описание) FQD19N10LTM

Поиск в бесплатном архиве даташитов datasheet.su


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Technical/Catalog InformationFQD19N10LTM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C15.6A
Rds On (Max) @ Id, Vgs100 mOhm @ 7.8A, 10V
Input Capacitance (Ciss) @ Vds 870pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs18nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD19N10LTM
FQD19N10LTM


 
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