FQD12N20LTM

FQD12N20LTM



Производитель:

Fairchild Semiconductor (VA)
Описание:
 MOSFET N-CH 200V 9A DPAK
Категория:
 Discrete Semiconductor Products
Корпус:
 10000
Год:
 FSC

Datasheet (Техническое описание) FQD12N20LTM

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationFQD12N20LTM
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs280 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds 1080pF @ 25V
Power - Max2.5W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs21nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD12N20LTM
FQD12N20LTM
FQD12N20LTMDKR ND
FQD12N20LTMDKRND
FQD12N20LTMDKR


 
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