FQD2N80TM

FQD2N80TM



Производитель:

Fairchild Semiconductor (VA)
Описание:
 MOSFET N-CHAN 800V 1.8A DPAK
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) FQD2N80TM

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationFQD2N80TM
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C1.8A
Rds On (Max) @ Id, Vgs6.3 Ohm @ 900mA, 10V
Input Capacitance (Ciss) @ Vds 550pF @ 25V
Power - Max2.5W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs15nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD2N80TM
FQD2N80TM
FQD2N80TMDKR ND
FQD2N80TMDKRND
FQD2N80TMDKR


 
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