NTMS4P01R2

NTMS4P01R2



Производитель:

ON Semiconductor
Описание:
 MOSFET P-CH 12V 3.4A 8-SOIC
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) NTMS4P01R2

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationNTMS4P01R2
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25° C3.4A
Rds On (Max) @ Id, Vgs45 mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) @ Vds 1850pF @ 9.6V
Power - Max790mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs35nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTMS4P01R2
NTMS4P01R2
NTMS4P01R2OS ND
NTMS4P01R2OSND
NTMS4P01R2OS


 
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