2SJ412(Q)

2SJ412(Q)



Производитель:

Toshiba
Описание:
 MOSFET P-CH 100V 16A TO-220FL
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) 2SJ412(Q)

Поиск в бесплатном архиве даташитов datasheet.su


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Technical/Catalog Information2SJ412(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs210 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 10V
Power - Max60W
PackagingTube
Gate Charge (Qg) @ Vgs48nC @ 10V
Package / CaseTO-220
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SJ412 Q
2SJ412Q
2SJ412Q ND
2SJ412QND
2SJ412Q


 
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