2SJ618(F)




Производитель:

Toshiba
Описание:
 MOSFET P-CH 180V 10A TO-3
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) 2SJ618(F)

Поиск в бесплатном архиве даташитов datasheet.su


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Technical/Catalog Information2SJ618(F)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)180V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs-
Input Capacitance (Ciss) @ Vds 2300pF @ 30V
Power - Max130W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / Case2-16C1B (TO-247 N)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SJ618 F
2SJ618F


 
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