MUN5216DW1T1G

MUN5216DW1T1G



Производитель:

ON Semiconductor
Описание:
 TRANS BRT NPN DUAL 50V SOT-363
Категория:
 Discrete Semiconductor Products
Корпус:
 SOT-323-6
Год:
 05+PB

Datasheet (Техническое описание) MUN5216DW1T1G

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationMUN5216DW1T1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor Type2 NPN - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max385mW
Resistor - Base (R1) (Ohms)4.7K
Resistor - Emitter Base (R2) (Ohms)-
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Frequency - Transition-
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MUN5216DW1T1G
MUN5216DW1T1G


 
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