MUN5213DW1T1G

MUN5213DW1T1G



Производитель:

ON Semiconductor (VA)
Описание:
 TRANS BRT NPN DUAL 50V SOT-363
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 06+

Datasheet (Техническое описание) MUN5213DW1T1G

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationMUN5213DW1T1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor Type2 NPN - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max385mW
Resistor - Base (R1) (Ohms)47K
Resistor - Emitter Base (R2) (Ohms)47K
Vce Saturation (Max) @ Ib, Ic250mV @ 300??A, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Frequency - Transition-
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
PackagingDigi-Reel?
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MUN5213DW1T1G
MUN5213DW1T1G
MUN5213DW1T1GOSDKR ND
MUN5213DW1T1GOSDKRND
MUN5213DW1T1GOSDKR


 
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