FDN306P

FDN306P



Производитель:

Fairchild Semiconductor
Описание:
 MOSFET P-CHAN 12V 2.6A SSOT3
Категория:
 Discrete Semiconductor Products
Корпус:
 SOT23
Год:
 04+

Datasheet (Техническое описание) FDN306P

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationFDN306P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25° C2.6A
Rds On (Max) @ Id, Vgs40 mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) @ Vds 1138pF @ 6V
Power - Max460mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs17nC @ 4.5V
Package / CaseSSOT-3
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDN306P
FDN306P
FDN306PTR ND
FDN306PTRND
FDN306PTR


 
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