NTMD4N03R2G

NTMD4N03R2G



Производитель:

ON Semiconductor
Описание:
 MOSFET PWR N-CH DL 4A 30V 8SOIC
Категория:
 Discrete Semiconductor Products
Корпус:
 SOIC
Год:
 06+

Datasheet (Техническое описание) NTMD4N03R2G

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationNTMD4N03R2G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs60 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 400pF @ 20V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs16nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTMD4N03R2G
NTMD4N03R2G
NTMD4N03R2GOSTR ND
NTMD4N03R2GOSTRND
NTMD4N03R2GOSTR


 
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