PMGD8000LN,115

PMGD8000LN,115



Производитель:


NXP Semiconductors (VA)
Описание:
MOSFET N-CH TRENCH DL 30V SOT363
Категория:
Discrete Semiconductor Products
Корпус:
--
Год:
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Datasheet (Техническое описание) PMGD8000LN,115

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Technical/Catalog InformationPMGD8000LN,115
VendorNXP Semiconductors (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C125mA
Rds On (Max) @ Id, Vgs8 Ohm @ 10mA, 4V
Input Capacitance (Ciss) @ Vds 18.5pF @ 5V
Power - Max200mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs350pC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number568; SOT363; GV, GW; 6
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PMGD8000LN,115
PMGD8000LN,115
568 2370 1 ND
56823701ND
568-2370-1


 
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