PMGD780SN,115

PMGD780SN,115



Производитель:


NXP Semiconductors (VA)
Описание:
MOSFET N-CH TRENCH DL 60V SOT363
Категория:
Discrete Semiconductor Products
Корпус:
--
Год:
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Datasheet (Техническое описание) PMGD780SN,115

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Technical/Catalog InformationPMGD780SN,115
VendorNXP Semiconductors (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C490mA
Rds On (Max) @ Id, Vgs920 mOhm @ 300mA, 10V
Input Capacitance (Ciss) @ Vds 23pF @ 30V
Power - Max410mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs1.05nC @ 10V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number568; SOT363; GV, GW; 6
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PMGD780SN,115
PMGD780SN,115
568 2369 6 ND
56823696ND
568-2369-6


 
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