PMGD280UN,115

PMGD280UN,115



Производитель:


NXP Semiconductors (VA)
Описание:
MOSFET N-CH TRENCH DL 20V SOT363
Категория:
Discrete Semiconductor Products
Корпус:
--
Год:
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Datasheet (Техническое описание) PMGD280UN,115

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Technical/Catalog InformationPMGD280UN,115
VendorNXP Semiconductors (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C870mA
Rds On (Max) @ Id, Vgs340 mOhm @ 200mA, 4.5V
Input Capacitance (Ciss) @ Vds 45pF @ 20V
Power - Max400mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs0.89nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number568; SOT363; GV, GW; 6
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PMGD280UN,115
PMGD280UN,115
568 2365 6 ND
56823656ND
568-2365-6


 
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